材料科学与纳米材料学报

抽象的

Morphological and Structural Investigation of Chemically Synthesized Copper Indium diSelenide (CIS) Ternary Thin Films

Qasim A Adeniji and Kola Odunaike

Ternary thin films of Copper Indium di-Selenide (CIS) has been prepared on glass substrates at 85°C by Chemical Bath Deposition technique and the morphological and structural properties were investigated. The deposition was based on the reaction between aqueous solution of CuCl2.2H2O, InCl3.4H2O and Na2SeSO3, in an alkaline medium of NH_3(aq) withTEA and EDTA as complexing agents. One of the films samples labeled as-deposited and the other, annealed at 450°C in an electric furnace. The crystalline nature of the CIS showed that the as-deposited films were amorphous in nature meanwhile the annealed films were crystalline in nature which showed the effect of annealing on the samples. The SEM micrograph of the thin films showed a coarse distributed structure and finely distributed structure for as-deposited and annealed films respectively.