English 
Spanish 
Russian 
German 
French 
Japanese 
Portuguese 
Hindi 开放获取期刊获得更多读者和引用
700 种期刊 和 15,000,000 名读者 每份期刊 获得 25,000 多名读者
索引于
- CAS 来源索引 (CASSI)
- 哥白尼索引
- 谷歌学术
- 打开 J 门
- Genamics 期刊搜索
- 参考搜索
- 哈姆达大学
- 亚利桑那州EBSCO
- OCLC-世界猫
- 普布隆斯
- 欧洲酒吧
有用的链接
开放获取期刊
分享此页面
抽象的
Studies on Different Doped Zn Concentrations of CdSe Thin Films
Rani S1, Shanthi J2, Kashif M3, Ayeshamariam A4* and Jayachandran M5
Different Zn concentration was doped with CdSe thin films by Electron Beam Evaporation method. Crystallite variation was studied for doping effect and it was found to be about 40 to 50 nm respectively. Optical band gap values are found to be modified by doping as well as annealing. Annealed films showed considerable influence in their optoelctronic and structural properties, which provided improvement in conversion efficiency of about 2.75% and 2.87% respectively.